Fully transparent field-effect transistor with high drain current and on-off ratio
Jisung Park,
Hanjong Paik,
Kazuki Nomoto,
Kiyoung Lee,
Bo-Eun Park,
Benjamin Grisafe,
Li-Chen Wang,
Sayeef Salahuddin,
Suman Datta,
Yongsung Kim,
Debdeep Jena,
Huili Grace Xing,
Darrell G. Schlom
Affiliations
Jisung Park
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Hanjong Paik
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Kazuki Nomoto
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
Kiyoung Lee
Nano Electronics Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Bo-Eun Park
Nano Electronics Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Benjamin Grisafe
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
Li-Chen Wang
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
Sayeef Salahuddin
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
Suman Datta
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
Yongsung Kim
Nano Electronics Laboratory, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Debdeep Jena
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Huili Grace Xing
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Darrell G. Schlom
Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
We report a fully transparent thin-film transistor utilizing a La-doped BaSnO3 channel layer that provides a drain current of 0.468 mA/μm and an on-off ratio of 1.5 × 108. The La-doped BaSnO3 channel is grown on a 100–150 nm thick unintentionally doped BaSnO3 buffer layer on a (001) MgO substrate by molecular-beam epitaxy. Unpatterned channel layers show mobilities of 127–184 cm2 V−1 s−1 at carrier concentrations in the low to mid 1019 cm−3 range. The BaSnO3 is patterned by reactive ion etching under conditions preserving the high mobility and conductivity. Using this patterning method, a sub-micron-scale thin film transistor exhibiting complete depletion at room temperature is achieved.
