Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Yuhei Miyauchi; Satoru Konabe; Feijiu Wang; Wenjin Zhang; Alexander Hwang; Yusuke Hasegawa; Lizhong Zhou; Shinichiro Mouri; Minglin Toh; Goki Eda; Kazunari Matsuda

doi:10.1038/s41467-018-04988-x

Nature Communications (Jul 2018)

Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Yuhei Miyauchi,
Satoru Konabe,
Feijiu Wang,
Wenjin Zhang,
Alexander Hwang,
Yusuke Hasegawa,
Lizhong Zhou,
Shinichiro Mouri,
Minglin Toh,
Goki Eda,
Kazunari Matsuda

Affiliations

Yuhei Miyauchi: Institute of Advanced Energy, Kyoto University
Satoru Konabe: Research Institute for Science and Technology, Tokyo University of Science
Feijiu Wang: Institute of Advanced Energy, Kyoto University
Wenjin Zhang: Institute of Advanced Energy, Kyoto University
Alexander Hwang: Department of Electrical and Computer Engineering, Rice University
Yusuke Hasegawa: Institute of Advanced Energy, Kyoto University
Lizhong Zhou: Institute of Advanced Energy, Kyoto University
Shinichiro Mouri: Institute of Advanced Energy, Kyoto University
Minglin Toh: Department of Physics, National University of Singapore
Goki Eda: Department of Physics, National University of Singapore
Kazunari Matsuda: Institute of Advanced Energy, Kyoto University

DOI: https://doi.org/10.1038/s41467-018-04988-x
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 10

Abstract

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Atomically thin transition metal dichalcogenides offer a platform to explore the valley degree of freedom originating from their electronic band structure. Here, the authors use polarization- and time-resolved spectroscopy to investigate the temperature-dependent valley pseudospin relaxation processes in WSe2 monolayers.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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