Influence of defect mobility on electrostrain in acceptor-doped Ba0.80Sr0.20TiO3
K. Vani,
Viswanathan Kumar
Affiliations
K. Vani
Center for Materials for Electronics Technology, Scientific Society, Department of Information Technology, Ministry of Communications and Information Technology, Government of India, Thrissur 680 581, Kerala, India
Viswanathan Kumar
Center for Materials for Electronics Technology, Scientific Society, Department of Information Technology, Ministry of Communications and Information Technology, Government of India, Thrissur 680 581, Kerala, India
This study reports significant differences in the defect-mediated electrostrain in B-site trivalent ions (Fe3+ and Mn3+) doped Barium titanate based system. Electron Paramagnetic Resonance (EPR) Spectroscopy has been employed as a structural probe for understanding the symmetry of defects. Differences in the reorientation of the defect dipoles have been correlated with the electrostrain. Mechanism for the higher strain in Mn-doped system has also been explained.
