Hybrid simulation method of quantum characteristics for advanced Si MOSFETs under extreme conditions by incorporating simplified master equation with TCAD

Abstract

Silicon (Si)-based quantum-dot (QD) device by advanced CMOS process is one of important technologies for quantum computing application and currently, it needs a fast and accurate quantum characteristics simulation for designing and optimizing the devices. In this paper, for the first time, a fast hybrid simulation method is proposed by incorporating simplified quantum master equation model with the traditional TCAD tool. Additionally, a SPICE MODEL is incorporated for transient current correction to achieve results closer to real observations. The QD devices forming on advanced stacked Si nanowire (NW) and stacked Si nanosheet (NS) are constructed and simulated by this method, yielding Coulomb diamond plot and charge energies for different structures at 1 K. Notably, a Coulomb blockade region of approximately 82 mV and a first Coulomb step width approximately 1.6 times wider than the blockade region are observed, consistent with theoretical expectations and confirming the method’s efficacy. Simulation characteristics of advanced diamond-like channel devices are obtained within 1277 s, demonstrating over 85% matching with experimental data. Meanwhile, the influence of quantum characteristics varying with the transistor’s structure and process parameters is also analyzed, which in turn provide a guidance for the design and the optimization of the QD device by advanced Si CMOS process.

Keywords

• Quantum dots
• TCAD
• Master equation
• Hybrid simulation