Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Lubin Han; Lin Liang; Yijian Wang; Xinling Tang; Song Bai

Power Electronic Devices and Components (Oct 2022)

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

Lubin Han,
Lin Liang,
Yijian Wang,
Xinling Tang,
Song Bai

Affiliations

Lubin Han: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Lin Liang: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China; Corresponding authors.
Yijian Wang: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
Xinling Tang: Beijing Intelligent Energy Research Institute, Beijing 102209, China; Corresponding authors.
Song Bai: State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, the 55th Research Institute of China Electronics Technology Group Corporation, Nanjing 210016, China

Journal volume & issue: Vol. 3
p. 100019

Abstract

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Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT. The thermal resistance, static characteristics and dynamic characteristics of SiC IGBT and SiC MOSFET module with Press-Pack packaging are measured to evaluate the switching frequency limit and electromagnetic interfere of them. The tradeoffs of SiC IGBT between switching frequency limit and electromagnetic interfere are less attractive due to the intrinsic characteristics, such as high power loss and punch-through effect. The possible solutions for SiC IGBT are proposed based on the improvement of driving resistor and driving voltage.

Published in Power Electronic Devices and Components

ISSN: 2772-3704 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
Website: https://www.sciencedirect.com/journal/power-electronic-devices-and-components

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