Nature Communications (May 2022)
Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge
- Liyan Dai,
- Jinyan Zhao,
- Jingrui Li,
- Bohan Chen,
- Shijie Zhai,
- Zhongying Xue,
- Zengfeng Di,
- Boyuan Feng,
- Yanxiao Sun,
- Yunyun Luo,
- Ming Ma,
- Jie Zhang,
- Sunan Ding,
- Libo Zhao,
- Zhuangde Jiang,
- Wenbo Luo,
- Yi Quan,
- Jutta Schwarzkopf,
- Thomas Schroeder,
- Zuo-Guang Ye,
- Ya-Hong Xie,
- Wei Ren,
- Gang Niu
Affiliations
- Liyan Dai
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Jinyan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Jingrui Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Bohan Chen
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Shijie Zhai
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science
- Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science
- Boyuan Feng
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
- Yanxiao Sun
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Yunyun Luo
- The State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Ming Ma
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Jie Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Sunan Ding
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
- Libo Zhao
- The State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Zhuangde Jiang
- The State Key Laboratory for Manufacturing Systems Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Wenbo Luo
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
- Yi Quan
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Jutta Schwarzkopf
- Leibniz-Institut für Kristallzüchtung
- Thomas Schroeder
- Leibniz-Institut für Kristallzüchtung
- Zuo-Guang Ye
- Department of Chemistry and 4D LABS, Simon Fraser University
- Ya-Hong Xie
- Department of Materials Science and Engineering, University of California
- Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- Gang Niu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University
- DOI
- https://doi.org/10.1038/s41467-022-30724-7
- Journal volume & issue
-
Vol. 13,
no. 1
pp. 1 – 10
Abstract
The integration of epitaxial complex oxides on semiconductor and flexible substrates is required but challenging. Here, the authors report the highly heterogeneous epitaxy of transferrable BaTiO3-δ membrane with enhanced flexoelectricity on Ge (011).
