Ultra-wide bandgap semiconductor Ga2O3 power diodes

Jincheng Zhang; Pengfei Dong; Kui Dang; Yanni Zhang; Qinglong Yan; Hu Xiang; Jie Su; Zhihong Liu; Mengwei Si; Jiacheng Gao; Moufu Kong; Hong Zhou; Yue Hao

doi:10.1038/s41467-022-31664-y

Nature Communications (Jul 2022)

Ultra-wide bandgap semiconductor Ga2O3 power diodes

Jincheng Zhang,
Pengfei Dong,
Kui Dang,
Yanni Zhang,
Qinglong Yan,
Hu Xiang,
Jie Su,
Zhihong Liu,
Mengwei Si,
Jiacheng Gao,
Moufu Kong,
Hong Zhou,
Yue Hao

Affiliations

Jincheng Zhang: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Pengfei Dong: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Kui Dang: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Yanni Zhang: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Qinglong Yan: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Hu Xiang: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Jie Su: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Zhihong Liu: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Mengwei Si: Department of Electronic Engineering, Shanghai Jiao Tong University
Jiacheng Gao: State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China
Moufu Kong: State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China
Hong Zhou: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University
Yue Hao: State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University

DOI: https://doi.org/10.1038/s41467-022-31664-y
Journal volume & issue: Vol. 13, no. 1
pp. 1 – 8

Abstract

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The simultaneous achievement of high breakdown voltage and low resistance is a contradictory point because it would require high and low doping simultaneously. Here, Zhou et al. achieve a power figure-of-merit of 13.2 GW/cm2 through hole injection and conductivity modulation effect.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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