MoS₂ BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES

Abstract

The electron energy band gap in one monomolecular layer of molybdenum dichalcogenide MoS2 is reduced upon substitution of S atoms by Te ones from 1,84 to 1,17 eV in the case of MoTe2. Both MoTe2 and MoS2 compounds in a bulk phase are indirect-gap semiconductors while one monomolecular layer of MoS2- x Tex compounds are transforming into direct-gap compounds for x 1,5. The band gap dependence has a linear behavior in the case when the concentration of Te atoms is smaller than the concentration of S atoms.

Keywords

• molybdenum disulfide
• monolayer
• electronic structure
• band gap