EPJ Web of Conferences (Jan 2022)

III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm

  • Richardson Stephen C.,
  • Woods Jonathan R. C.,
  • Daykin Jake,
  • Gorecki Jon,
  • Bek Roman,
  • Klokkou Nicholas T.,
  • Wilkinson James S.,
  • Jetter Michael,
  • Apostolopoulos Vasileios

DOI
https://doi.org/10.1051/epjconf/202226601011
Journal volume & issue
Vol. 266
p. 01011

Abstract

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We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.