Nature Communications (Jul 2022)

Nonvolatile ferroelectric domain wall memory integrated on silicon

  • Haoying Sun,
  • Jierong Wang,
  • Yushu Wang,
  • Changqing Guo,
  • Jiahui Gu,
  • Wei Mao,
  • Jiangfeng Yang,
  • Yuwei Liu,
  • Tingting Zhang,
  • Tianyi Gao,
  • Hanyu Fu,
  • Tingjun Zhang,
  • Yufeng Hao,
  • Zhengbin Gu,
  • Peng Wang,
  • Houbing Huang,
  • Yuefeng Nie

DOI
https://doi.org/10.1038/s41467-022-31763-w
Journal volume & issue
Vol. 13, no. 1
pp. 1 – 9

Abstract

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Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.