Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

Abstract

Abstract Schottky effect of two-dimensional materials is important for nanoscale electrics. A ReSe2 flake is transferred to be suspended between an Au sink and an Au nanofilm. This device is initially designed to measure the transport properties of the ReSe2 flake. However, a rectification behavior is observed in the experiment from 273 to 340 K. The rectification coefficient is about 10. The microstructure and elements composition are systematically analyzed. The ReSe2 flake and the Au film are found to be in contact with the Si substrate from the scanning electron microscope image in slant view of 45°. The ReSe2/Si and Si/Au contacts are p-n heterojunction and Schottky contacts. Asymmetry of both contacts results in the rectification behavior. The prediction based on the thermionic emission theory agrees well with experimental data.

Keywords

• ReSe2
• Rectification
• Two-dimensional materials