Carbon-rich SiCN ceramics were prepared by divinylbenzene (DVB)-modified polysilazane (PSN2), and a high-conductivity SiCN thin film sensor suitable for medium-low temperature sensing was fabricated. The modified liquid precursors were patterned by direct ink writing to produce SiCN resistive grids with line widths of several hundreds of micrometers and thicknesses of several micrometers. The introduction of DVB not only increases the critical thickness of SiCN ceramics several times, but also significantly improves the conductivity of SiCN, making it meet the conductivity requirements of sensing applications in the mid-low temperature range. The electrical conductivity and microstructure of DVB-modified SiCN ceramics were studied in detail. In the temperature range of 30~400 °C, the temperature resistance performance of DVB modified SiCN resistance grid was measured. The SiCN ceramics with low DVB content not only have excellent electrical conductivity, but also have good oxidation resistance.
