IEEE Access (Jan 2021)

Design of a Wideband CMOS Balun and Its Application in a Wideband RF Front-End

  • Tongxuan Zhou,
  • Ge-Liang Yang,
  • Rui Chen,
  • Hao Zhang,
  • Keping Wang

DOI
https://doi.org/10.1109/ACCESS.2021.3093508
Journal volume & issue
Vol. 9
pp. 94416 – 94425

Abstract

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This paper presents a 1:2 wideband CMOS balun, and its application for sub-6 GHz wideband front-end. In order to eliminate the amplitude/phase mismatch, the primary and secondary windings are shorted by a transmission line (T-line) for a common ground. The float metal in the primary winding is used for artificial dielectric compensation which further reduce the amplitude imbalance by up to about 0.5 dB. A 2.0-to-3.7 GHz wideband RF front-end is also designed by using the proposed CMOS balun. The balun and RF front-end are fabricated in a 0.13- $\mu \text{m}$ bulk CMOS technology. The bandwidth of the balun with $\vert \text {S}11\vert < {-}10$ dB is 2.2-to-5.1 GHz. The fractional bandwidth is large than 79.5%. The corresponding maximum amplitude and phase mismatch is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8-to-5.6 dB from 2.2 to 5.1 GHz.

Keywords