Nature Communications (Jan 2019)

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

  • Gwangwoo Kim,
  • Sung-Soo Kim,
  • Jonghyuk Jeon,
  • Seong In Yoon,
  • Seokmo Hong,
  • Young Jin Cho,
  • Abhishek Misra,
  • Servet Ozdemir,
  • Jun Yin,
  • Davit Ghazaryan,
  • Matthew Holwill,
  • Artem Mishchenko,
  • Daria V. Andreeva,
  • Yong-Jin Kim,
  • Hu Young Jeong,
  • A-Rang Jang,
  • Hyun-Jong Chung,
  • Andre K. Geim,
  • Kostya S. Novoselov,
  • Byeong-Hyeok Sohn,
  • Hyeon Suk Shin

DOI
https://doi.org/10.1038/s41467-018-08227-1
Journal volume & issue
Vol. 10, no. 1
pp. 1 – 9

Abstract

Read online

The possibility to combine planar and van der Waals heterostructures holds great promise for nanoscale electronic devices. Here, the authors report an innovative method to synthesise embedded graphene quantum dots within hexagonal boron nitride matrix for vertical tunnelling single electron transistor applications.