Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets

Abstract

Synthetic anti-ferromagnets, where two ferromagnetic layers are coupled anti-ferromagnetically via a spacer, are known for their very large current-induced domain wall velocities. Here, Guan et al show that the velocity of the domain walls in synthetic anti-ferromagnetic nanowires can be tuned over a wide range due to reversible oxidization via ionic liquid gating.