Design of Ultra-Compact Optical Memristive Switches with GST as the Active Material
Ningning Wang,
Hanyu Zhang,
Linjie Zhou,
Liangjun Lu,
Jianping Chen,
B.M.A. Rahman
Affiliations
Ningning Wang
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Hanyu Zhang
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Linjie Zhou
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Liangjun Lu
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Jianping Chen
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
B.M.A. Rahman
Department of Electrical and Electronic Engineering, City, University of London, London EC1V 0HB, UK
In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge2Sb2Te5 (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high switching extinction ratio. We optimize the device design by using finite-difference-time-domain (FDTD) simulations. A device with a length of 4.7 μm including silicon waveguide tapers exhibits a high extinction ratio of 33.1 dB and a low insertion loss of 0.48 dB around the 1550 nm wavelength. The operation bandwidth of the device is around 60 nm.
