The Influence of Annealing and Film Thickness on the Specific Properties of Co<sub>40</sub>Fe<sub>40</sub>Y<sub>20</sub> Films
Wen-Jen Liu,
Yung-Huang Chang,
Chia-Chin Chiang,
Yuan-Tsung Chen,
Yu-Chi Liu,
Yu-Jie Huang,
Po-Wei Chi
Affiliations
Wen-Jen Liu
Department of Materials Science and Engineering, I-Shou University, Kaohsiung City 840, Taiwan
Yung-Huang Chang
Bachelor Program in Interdisciplinary Studies, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan
Chia-Chin Chiang
Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung City 80778, Taiwan
Yuan-Tsung Chen
Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan
Yu-Chi Liu
Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan
Yu-Jie Huang
Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan
Po-Wei Chi
Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
Cobalt Iron Yttrium (CoFeY) magnetic film was made using the sputtering technique in order to investigate the connection between the thickness and annealing procedures. The sample was amorphous as a result of an insufficient thermal driving force according to X-ray diffraction (XRD) examination. The maximum low-frequency alternate-current magnetic susceptibility (χac) values were raised in correlation with the increased thickness and annealing temperatures because the thickness effect and Y addition improved the spin exchange coupling. The best value for a 50 nm film at annealing 300 °C for χac was 0.20. Because electron carriers are less constrained in their conduction at thick film thickness and higher annealing temperatures, the electric resistivity and sheet resistance are lower. At a thickness of 40 nm, the film’s maximum surface energy during annealing at 300 °C was 28.7 mJ/mm2. This study demonstrated the passage of photon signals through the film due to the thickness effect, which reduced transmittance. The best condition was found to be 50 nm with annealing at 300 °C in this investigation due to high χac, strong adhesion, and low resistivity, which can be used in magnetic fields.
