OPTICAL PERFORMANCES OF SILICON DIOXIDE THIN FILMS RECEIVED BY DIRECT DEPOSITION FROM ION BEAMS

Abstract

Influence of fractional pressure of monosilane and argon intermixture and substrate temperature on optical performances of thin-film coatings from the silicon dioxide, received by direct deposition from ion beams on substrates from a glass and silicon with use of the end Hall accelerator as a ion source is investigated. It is positioned, that the magnification of fractional pressure of monosilane and argon intermixture of results in to growth of deposition rate and a refractivity and decrease in an optical transmission of coatings. Rise in substrate temperature promoted improvement of optical performances of silicon dioxide layers that explains magnification of adatoms mobility and chemical interaction boost between silicon and oxygen.

Keywords

• ионные пучки
• прямое осаждение
• торцевой холловский ускоритель
• диоксид кремния
• оптические покрытия
• оптические характеристики