Advances in Electrical and Electronic Engineering (Jan 2007)

Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution

  • Veronika Vavrunkova,
  • Jarmila Mullerova,
  • Pavel Sutta

Journal volume & issue
Vol. 6, no. 3
pp. 108 – 111

Abstract

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We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.

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