Characteristics of Carbon Nanotube Cold Cathode Triode Electron Gun Driven by MOSFET Working at Subthreshold Region
Yajie Guo,
Baohong Li,
Yu Zhang,
Shaozhi Deng,
Jun Chen
Affiliations
Yajie Guo
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Baohong Li
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Yu Zhang
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Shaozhi Deng
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Jun Chen
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
The carbon nanotube cold cathode has important applications in the X-ray source, microwave tube, neutralizer, etc. In this study, the characteristics of carbon nanotube (CNT) electron gun in series with metal-oxide-semiconductor field-effect transistor (MOSFET) were studied. CNTs were prepared on a stainless steel substrate by chemical vapor deposition and assembled with a mesh gate to form an electron gun. The anode current of the electron gun can be accurately regulated by precisely controlling the MOSFET gate voltage in the subthreshold region from 1 to 40 µA. The current stability measurements show the cathode current fluctuation was 0.87% under 10 h continuous operation, and the corresponding anode current fluctuation was 2.3%. The result has demonstrated that the MOSFET can be applied for the precise control of the CNT electron gun and greatly improve current stability.
