Spatial Selected Spin Filtering Effect in Z-Shaped MoS<sub>2</sub> Nanoribbon
Yi-Hao Ma,
Liang-Hao Ruan,
Jing Wang,
Wen-Sheng Zhao,
Yue Hu,
Yuhua Cheng,
Da-Wei Wang,
Gaofeng Wang
Affiliations
Yi-Hao Ma
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Liang-Hao Ruan
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Jing Wang
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Da-Wei Wang
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Engineering Research Center of Smart Microsensors and Microsystems of MOE, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China
Due to the gapless between any two successive subbands with the same spin, the spin polarization in uniform MoS2 zigzag nanoribbon (MoS2-ZR) is weak. Here, through configuring Z-shaped structure, we realize 100% spin polarization in MoS2-ZR with only exchange field. The filtered spin electrons transmit along a specified edge of the device. This phenomenon is the result of the combined effect of the localized edge states and structure induced inversion of the Mo-edge and S-edge. In our calculation the fully spin polarization appears in several energy regions, so this Z-shaped MoS2-ZRs can be used in making spintronic devices.
