Non-destructive Inspection of Voids on Power MOSFET’s

Abstract

Voids can affect the normal function on Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET’s) if they are over 25% of the total area, this being animportant feature in the quality control of voids on the manufacturing process. The ex-perimental method was employed using the Scanning Electron Microscopy with EnergyDispersive Spectroscopy (SEM-EDS) and microtomography techniques. The scanningelectron microscopy with energy dispersive spectroscopy method permitted the quan-tification of the chemical and physical characteristics of the solder layer in each device.The microtomography method has been employed as a Non-Destructive Inspection(NDI) method on Power MOSFET’s to quantify the voids. The research methodologypermitted the quantification of the voids with the aim of inspecting the manufacturingimperfections which can influence the performance of the device. The object-orientedprogramming was developed using LabView software which allowed improving thevoids detection from an image with distortion, quantifying microvoids and macrovoids,locating in the solder layer using the voiding mass center and obtaining the statisticresult. The results of analyzing voids demonstrated that the technique and the method-ologies employed for this type of defect detection in Power MOSFET’s could representa suitable NDI tool for quality control.

Keywords

• Power MOSFET’s
• Quality Control
• Software
• Tomography
• Voids.