Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors
Xuemei Yin,
Yayi Chen,
Guoyuan Li,
Wei Zhong,
Sunbin Deng,
Lei Lu,
Guijun Li,
Hoi Sing Kwok,
Rongsheng Chen
Affiliations
Xuemei Yin
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Yayi Chen
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Guoyuan Li
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Wei Zhong
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Sunbin Deng
State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Lei Lu
State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Guijun Li
College of Electronic Science and Technology, Shenzhen University, Shenzhen 518061, China
Hoi Sing Kwok
State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Rongsheng Chen
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.
