Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

Xuemei Yin; Yayi Chen; Guoyuan Li; Wei Zhong; Sunbin Deng; Lei Lu; Guijun Li; Hoi Sing Kwok; Rongsheng Chen

doi:10.1063/5.0048125

AIP Advances (Apr 2021)

Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

Xuemei Yin,
Yayi Chen,
Guoyuan Li,
Wei Zhong,
Sunbin Deng,
Lei Lu,
Guijun Li,
Hoi Sing Kwok,
Rongsheng Chen

Affiliations

Xuemei Yin: School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Yayi Chen: School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Guoyuan Li: School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Wei Zhong: School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Sunbin Deng: State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Lei Lu: State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Guijun Li: College of Electronic Science and Technology, Shenzhen University, Shenzhen 518061, China
Hoi Sing Kwok: State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
Rongsheng Chen: School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China

DOI: https://doi.org/10.1063/5.0048125
Journal volume & issue: Vol. 11, no. 4
pp. 045326 – 045326-5

Abstract

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We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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