IEEE Photonics Journal (Jan 2022)

Radiation-Resistant Er-Doped Fiber Based on Ge-Ce Co-Doping

  • Chi Cao,
  • Zhimu Gu,
  • Qiang Qiu,
  • Le He,
  • Yingbo Chu,
  • Yingbin Xing,
  • Nengli Dai,
  • Jinyan Li

DOI
https://doi.org/10.1109/JPHOT.2022.3196945
Journal volume & issue
Vol. 14, no. 4
pp. 1 – 5

Abstract

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We investigated the radiation responses of Ge-Ce co-doped erbium-doped fibers (EDFs) under gamma radiation with a dose up to 1000 Gy and a dose rate of 0.2 Gy/s. Three EDFs with low or high concentrations of Ge or Ce were fabricated by modified chemical vapor deposition (MCVD). The absorption spectra and amplification performance of the three Ge-Ce co-doped EDFs before and after radiation were tested and analyzed in detail. The radiation-induced absorption (RIA) can be dramatically weakened by heavily co-doping Ge and Ce, and 0.8 dB radiation-induced gain degradation at 1550 nm was obtained in the erbium-doped fiber amplifier (EDFA) with heavy Ge and Ce doping at a dose of 1000 Gy. Furthermore, the possible mechanism of Ce and Ge effects on radiation tolerance enhancement is discussed. Relevant results indicate that the Ge-Ce co-doped EDF has significant performance improvements in radiation resistance, making it ideal for applications in harsh radiation environments.

Keywords