Computer Simulation of Ion Bombardment of Targets Based on Double Glow Plasma Surface Alloying

Abstract

The generation and transport process of bombardment ions and the sputtering process of ions on target are important parts to realize double glow plasma metallization. In this paper, on the basis of the glow discharge theory and COMSOL Multiphysics software, a typical double glow plasma metalizing device was modeled, and the energy range of bombardment ions was analyzed. Combined with the classical scattering theory and Monte Carlo method, SRIM software was used to simulate the sputtering process of Ar+ on multiple metal targets. The results show that the position of sputtering atom is concentrated near the incident position of metal target, forming a circular sputtering crater. The energy of sputtered atoms is within 20 eV. With the increase of incident ion energy, some sputtered atoms with high energy and large angle appear. The sputtering yield increases with the increase of the electron filling degree of the d shell layer of target atom, and the sputtering yield mainly comes from the low-energy recoil atoms. The larger sputtering yield means that the more low energy recoil atoms, the more dispersed energy transfer and the lower sputtering atom energy.

Keywords

• double glow plasma surface alloying
• plasma
• sputtering
• monte carlo
• computer simulation