Automatika (Apr 2018)

High-power shortwave DRM transmitter in solid-state technology

  • Goran Pavlakovic,
  • Silvio Hrabar

DOI
https://doi.org/10.1080/00051144.2018.1517439
Journal volume & issue
Vol. 59, no. 2
pp. 158 – 171

Abstract

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Design of high-power shortwave broadcast transmitters is one among the rare areas in the field of radiofrequency (RF) electronics, where the electron tube, as the main element for amplification of RF signal, is still in active use. The first successful attempts to replace the electron tube with solid-state components, primarily in the output stage amplifier modules for the Digital Radio Mondiale (DRM) shortwave broadcast transmitters have been published only recently. With the latest technology advancements in RF power transistors, it is now possible for commercially available RF power MOSFET transistors to be used for switching purposes at shortwave frequencies. Here, an architecture of a 10 kW shortwave broadcast transmitter with solid-state power amplifier modules in the RF output stage is proposed. Different implementations of the RF output stage that include power adding network from each amplifier module and the output matching network are analysed, both analytically and numerically. After choosing the optimal architecture, a prototype of a commercial shortwave DRM broadcast transmitter was designed and constructed, measured, tuned and tested at RIZ Transmitter factory Zagreb.

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