Erratum: “Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator” [AIP Advances 1, 032167 (2011)]

• Ni Zhong,
• Hisashi Shima,
• Hiro Akinaga

Affiliations

Ni Zhong

National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan and CREST, Japan Science and Technology Agency, 5 Sanbancho, Chiyoda-ku, Tokyo 100075, Japan

Hisashi Shima

National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan and CREST, Japan Science and Technology Agency, 5 Sanbancho, Chiyoda-ku, Tokyo 100075, Japan

Hiro Akinaga

National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan and CREST, Japan Science and Technology Agency, 5 Sanbancho, Chiyoda-ku, Tokyo 100075, Japan