Secondary electron emission and photoelectric emission with account of excited electrons’ moving backward emission surface

Abstract

From existing old photoelectric emission PEE and secondary electron emission SEE models and the process that 50 % excited electrons are treated as as those moving backward emission surface, this study develops new SEE model for negative electron affinity semiconductor NEAS with large lSEE and new PEE model, respectively; lSEE denotes mean escape depth of secondary electrons. From our investigations of PEE from metals and NEAS with large lPEE and SEE from NEAS with large lSEE, it can be concluded that the new SEE model for NEAS with large lSEE and new PEE model developed here are correct; lPEE denotes mean escape depth of photo-emitted electrons. The theories of SEE from insulators with 120 Å≤ lSEE ≤ 1.0 × 104 Å are also developed and discussed.

Keywords

• Photoelectric emission
• Secondary electron emission
• Mean surface escape probability
• Excited electrons’ moving backward
• Absolute quantum efficiency