Thermal stability of resistive switching effect in ZnO/BiFeO3 bilayer structure

Abstract

Superior thermal stability of resistive switching performance is essential for resistive random access memory (R-RAM) device with high reliability. Thermal stable resistive switching performance can be achieved in ZnO/BiFeO3 bilayer structure by modifying the interface. The bilayer structure with a distinct interface is fabricated with an optimized annealing process in chemical solution deposition method. This bilayer structure shows a better thermal stability compared to the case with an indistinct interface. Attempt has been made to explain such effects based on conductive filament mechanism. We propose that the confinement of the oxygen vacancies migration at distinct interface could be the reason for the thermal stability. Our results indicate that morphology of interface is an important factor to improve the thermal stability of R-RAM.