Broadband, tunable wavelength conversion using tapered silicon fibers extending up to 2.4 μm
Dong Wu,
Than S. Saini,
Shiyu Sun,
Meng Huang,
Qiang Fu,
Thomas W. Hawkins,
John Ballato,
Anna C. Peacock
Affiliations
Dong Wu
Optoelectronics Research Center, University of Southampton, Southampton SO17 1BJ, United Kingdom
Than S. Saini
Department of Physics, National Institute of Technology, Kurukshetra 136119, Haryana, India
Shiyu Sun
Optoelectronics Research Center, University of Southampton, Southampton SO17 1BJ, United Kingdom
Meng Huang
Optoelectronics Research Center, University of Southampton, Southampton SO17 1BJ, United Kingdom
Qiang Fu
Optoelectronics Research Center, University of Southampton, Southampton SO17 1BJ, United Kingdom
Thomas W. Hawkins
Center for Optical Materials Science and Engineering Technologies and Department of Materials Science and Engineering, Clemson University, Clemson, South Carolina 29634, USA
John Ballato
Center for Optical Materials Science and Engineering Technologies and Department of Materials Science and Engineering, Clemson University, Clemson, South Carolina 29634, USA
Anna C. Peacock
Optoelectronics Research Center, University of Southampton, Southampton SO17 1BJ, United Kingdom
Wavelength conversion via four-wave mixing holds great promise for the construction of broadband and tunable light sources at wavelengths beyond 2 μm. In this work, we design and fabricate a tapered silicon core optical fiber with a dispersion profile that supports efficient conversion spanning the telecom band up to the edge of the mid-infrared spectral region over an extended propagation length. By pumping with a fiber laser centered around 1.99 μm, a tuning range of 690 nm has been measured, although simulations predict that a bandwidth of up to 1255 nm could be observed if a suitable seed source was available. Conversion efficiencies of ∼−30 dB have been obtained over a bandwidth of 380 nm when using an input pump power of only 6 dBm, with a maximum efficiency of −18 dB achieved when the conversion overlaps the strong Raman gain of the silicon core.