Linearization of the tunneling magnetoresistance sensors through a three-step annealing process

Yuzu Sun; Qingtao Xia; Dandan Zhang; Qianqian Mou; Yunpeng Li; Libo Xie; Shaojie Guang; Zhiqiang Cao; Dapeng Zhu; Weisheng Zhao

doi:10.1063/5.0176535

AIP Advances (Jan 2024)

Linearization of the tunneling magnetoresistance sensors through a three-step annealing process

Yuzu Sun,
Qingtao Xia,
Dandan Zhang,
Qianqian Mou,
Yunpeng Li,
Libo Xie,
Shaojie Guang,
Zhiqiang Cao,
Dapeng Zhu,
Weisheng Zhao

Affiliations

Yuzu Sun: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Qingtao Xia: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Dandan Zhang: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Qianqian Mou: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Yunpeng Li: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Libo Xie: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Shaojie Guang: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Zhiqiang Cao: Zhongfa Aviation Institute of Beihang University, Beihang University, Hangzhou 311115, China
Dapeng Zhu: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
Weisheng Zhao: Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

DOI: https://doi.org/10.1063/5.0176535
Journal volume & issue: Vol. 14, no. 1
pp. 015304 – 015304-5

Abstract

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For tunneling magnetoresistance (TMR) sensors using magnetic tunnel junctions (MTJ), the sensor output linearization is of great importance for practical applications. The current study employs a three-step magnetic annealing procedure for linearizing the double-pinned MTJs, setting the magnetization of the free layer to be orthogonal to that of the reference layer. Compared to the traditional two-step annealing procedure, the three-step annealing procedure benefits from a lower annealing temperature and excellent linearity performance. Utilizing the three-step annealing procedure, the sensitivity and the detectivity of 1.57 mV/V/Oe and 29.3 nT Hz0.5 @ 10 Hz, respectively, was achieved in a full Wheatstone bridge TMR sensor. Our results reveal a new pathway for linearization of the TMR sensors through three-step annealing process.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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