The SnSSe SA with high modulation depth for passively Q-switched fiber laser
Chen Jigen,
Liu Mengli,
Liu Ximei,
Ouyang Yuyi,
Liu Wenjun,
Wei Zhiyi
Affiliations
Chen Jigen
Provincial Key Laboratory for Cutting Tools, Taizhou University, Taizhou 318000, China
Liu Mengli
State Key Laboratory of Information Photonics and Optical Communications, School of Science, P. O. Box 91, Beijing University of Posts and Telecommunications, Beijing 100876, China
Liu Ximei
State Key Laboratory of Information Photonics and Optical Communications, School of Science, P. O. Box 91, Beijing University of Posts and Telecommunications, Beijing 100876, China
Ouyang Yuyi
State Key Laboratory of Information Photonics and Optical Communications, School of Science, P. O. Box 91, Beijing University of Posts and Telecommunications, Beijing 100876, China
Liu Wenjun
State Key Laboratory of Information Photonics and Optical Communications, School of Science, P. O. Box 91, Beijing University of Posts and Telecommunications, Beijing 100876, China
Wei Zhiyi
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
IV–VI semiconductors have attracted widespread attention in basic research and practical applications, because of their electrical and optoelectronic properties comparable to graphene. Herein, an optical modulator based on SnSSe with strong nonlinearity is prepared by chemical vapor transfer method. The modulation depth of proposed SnSSe saturable absorber (SA) is up to 57.5%. By incorporating SnSSe SA into the laser, the Q-switched pulses as short as 547.8 ns are achieved at 1530.07 nm. As far as we know, this is the first successful application of SnSSe in Q-switched lasers. Our investigation not only prove the optical nonlinearity of SnSSe, but also reveal the potential of SnSSe SA in ultrafast photonics.
