In this paper, a predictive model is developed to characterize the impact of high-frequency electromagnetic interference (EMI) on the leakage current of CMOS integrated circuits. It is shown that the frequency dependence can be easily described by a transfer function that depends only on a few dominant parasitic elements. The developed analytical model is successfully compared against measurement data from devices fabricated using 180 nm, 130 nm, and 65 nm standard CMOS processes through TSMC. Based on the predictive model, the impact of EMI on leakage current in a CMOS inverter is reduced by increasing the frequency from 10 MHz to 4 GHz.
