Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Ray-Hua Horng; Apoorva Sood; Siddharth Rana; Niall Tumity; Fu-Gow Tarntair; Catherine Langpoklakpam; Hao-Chung Kuo; Jitendra Pratap Singh

Materials Today Advances (Jun 2023)

Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

Ray-Hua Horng,
Apoorva Sood,
Siddharth Rana,
Niall Tumity,
Fu-Gow Tarntair,
Catherine Langpoklakpam,
Hao-Chung Kuo,
Jitendra Pratap Singh

Affiliations

Ray-Hua Horng: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC; Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC; Corresponding author. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC.
Apoorva Sood: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
Siddharth Rana: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC; International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan; Physics Department, Indian Institute of Technology Delhi, New Delhi, 110016, India
Niall Tumity: International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
Fu-Gow Tarntair: Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
Catherine Langpoklakpam: Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
Hao-Chung Kuo: Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan, ROC
Jitendra Pratap Singh: Physics Department, Indian Institute of Technology Delhi, New Delhi, 110016, India

Journal volume & issue: Vol. 18
p. 100382

Abstract

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Conductive β-Ga2O3 epilayers grown on the sapphire substrate using metalorganic chemical vapor deposition (MOCVD) were studied by Si-ion implanted. A metal-insulator-semiconductor diode (MISD) was fabricated using undoped and Si implanted β-Ga2O3 epitaxial layer. The electrical and carrier transport properties of the different MISD with different distance between cathode and anode contact ranging from 10 to 200 μm is studied. The various parameters such as forward current density, reverse breakdown voltage and ideality factor of the diodes has been calculated from the current-voltage curve. A reverse breakdown voltage of about 1.1 kV was observed in case of anode-cathode distance of 200 μm.

Published in Materials Today Advances

ISSN: 2590-0498 (Online)
Publisher: Elsevier
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/materials-today-advances

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