Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review
Guo Li,
Mingsheng Xu,
Dongyang Zou,
Yingxin Cui,
Yu Zhong,
Peng Cui,
Kuan Yew Cheong,
Jinbao Xia,
Hongkun Nie,
Shuqiang Li,
Handoko Linewih,
Baitao Zhang,
Xiangang Xu,
Jisheng Han
Affiliations
Guo Li
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Mingsheng Xu
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Dongyang Zou
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Yingxin Cui
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Yu Zhong
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Peng Cui
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Kuan Yew Cheong
Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, University Sains Malaysia, Seberang Perai 14300, Pulau Pinang, Malaysia
Jinbao Xia
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Hongkun Nie
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Shuqiang Li
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Handoko Linewih
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Baitao Zhang
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Xiangang Xu
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
Jisheng Han
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.
