Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

Abstract

The article presents the results of experimental studies of multilayer nanostructures of magnetic straintronics formed by magnetron sputtering on a 100 mm silicon wafer. The object of the study is two types of nanostructures: Ta/FeNiCo/CoFe/Ta and Ta/FeNi/CoFe/Ta, differing in the ratio of magnetic layers. The magnetic and magnetoresistive characteristics of multilayer nanostructures under varying mechanical loads are studied both on a 100 mm wafer and in the form of 4 × 20 mm2 samples of two types. The first, where the axis of easy magnetization is directed along the long side of the sample, and the second, where the axis of easy magnetization is a tilt at 45°. Based on the obtained data, the conclusions about the practical application of these nanostructures in magnetic straintronics elements are drawn.

Keywords

• magnetostriction effect
• magnetoresistive effect
• thin-film nanostructures
• magnetic straintronics