Carbon nanotubes doped with trivalent elements by using back - scattering Raman spectroscopy

Abstract

In this paper by using DC arc discharge method and acetylene gas, as the carbon source, and nitrogen, as the carrier gas, canrbon nanotubes, CNTs, doped with trivalent element boron, B, have been produced. The deposited CNTs on the cathod electrod, which have structural doped properties to boron element, have been collected and after purification have been investigated by back-scattering Raman spectroscopy. The results reveal that the high frequency G mode component in CNTs doped with electron acceptor element, B, shift to higher wavenumbers. The low frequency G mode component which can appear at approximately 1540–1570 cm-1 wavenumber region, called BWF mode, is a sign of metallic CNT. In the synthesized doped CNTs due to the presence of boron dopant, D mode has sharp peaks and has relatively high intensity in the Raman spectra .

Keywords

• carbon nanotubes
• CNTs
• arc discharge
• Raman spectroscopy