Flexible Artificial Ag NPs:a–SiC<sub>0.11</sub>:H Synapse on Al Foil with High Uniformity and On/Off Ratio for Neuromorphic Computing

Zongyan Zuo; Chengfeng Zhou; Zhongyuan Ma; Yufeng Huang; Liangliang Chen; Wei Li; Jun Xu; Kunji Chen

doi:10.3390/nano14181474

Nanomaterials (Sep 2024)

Flexible Artificial Ag NPs:a–SiC<sub>0.11</sub>:H Synapse on Al Foil with High Uniformity and On/Off Ratio for Neuromorphic Computing

Zongyan Zuo,
Chengfeng Zhou,
Zhongyuan Ma,
Yufeng Huang,
Liangliang Chen,
Wei Li,
Jun Xu,
Kunji Chen

Affiliations

Zongyan Zuo: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Chengfeng Zhou: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Zhongyuan Ma: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Yufeng Huang: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Liangliang Chen: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Wei Li: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Jun Xu: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Kunji Chen: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

DOI: https://doi.org/10.3390/nano14181474
Journal volume & issue: Vol. 14, no. 18
p. 1474

Abstract

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A neuromorphic computing network based on SiCx memristor paves the way for a next-generation brain-like chip in the AI era. Up to date, the SiCx–based memristor devices are faced with the challenge of obtaining flexibility and uniformity, which can push forward the application of memristors in flexible electronics. For the first time, we report that a flexible artificial synaptic device based on a Ag NPs:a–SiC0.11:H memristor can be constructed by utilizing aluminum foil as the substrate. The device exhibits stable bipolar resistive switching characteristic even after bending 1000 times, displaying excellent flexibility and uniformity. Furthermore, an on/off ratio of approximately 107 can be obtained. It is found that the incorporation of silver nanoparticles significantly enhances the device’s set and reset voltage uniformity by 76.2% and 69.7%, respectively, which is attributed to the contribution of the Ag nanoparticles. The local electric field of Ag nanoparticles can direct the formation and rupture of conductive filaments. The fitting results of I–V curves show that the carrier transport mechanism agrees with Poole–Frenkel (P–F) model in the high-resistance state, while the carrier transport follows Ohm’s law in the low-resistance state. Based on the multilevel storage characteristics of the Al/Ag NPs:a–SiC0.11:H/Al foil resistive switching device, we successfully observed the biological synaptic characteristics, including the long–term potentiation (LTP), long–term depression (LTD), and spike–timing–dependent plasticity (STDP). The flexible artificial Ag NPs:a–SiC0.11:H/Al foil synapse possesses excellent conductance modulation capabilities and visual learning function, demonstrating the promise of application in flexible electronics technology for high-efficiency neuromorphic computing in the AI period.

Published in Nanomaterials

ISSN: 2079-4991 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry
Website: https://www.mdpi.com/journal/nanomaterials

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