Experimental investigation on the single event gate rupture and hardening of the 600 V trench IGBT

Abstract

In this paper, a single particle irradiation experiment is performed on the 600 V trench insulated gate bipolar transistor for the first time. The experimental results show that, at the collector voltages of 100 V and 300 V, single event gate rupture occurs in the device under the linear energy transfer of 81.35 MeV cm2/g. The damage occurs in the gate oxide layer near the bottom of the trench gate. The simulation results show that the holes accumulated at the bottom of the trench gate increase the electric field under irradiation, which causes the failure of the gate oxide. Furthermore, the hardening device structure is proposed by increasing the thickness of the bottom gate oxide.