Nature Communications (Dec 2019)
Robust edge photocurrent response on layered type II Weyl semimetal WTe2
- Qinsheng Wang,
- Jingchuan Zheng,
- Yuan He,
- Jin Cao,
- Xin Liu,
- Maoyuan Wang,
- Junchao Ma,
- Jiawei Lai,
- Hong Lu,
- Shuang Jia,
- Dayu Yan,
- Youguo Shi,
- Junxi Duan,
- Junfeng Han,
- Wende Xiao,
- Jian-Hao Chen,
- Kai Sun,
- Yugui Yao,
- Dong Sun
Affiliations
- Qinsheng Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Jingchuan Zheng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Yuan He
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Jin Cao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Xin Liu
- International Center for Quantum Materials, School of Physics, Peking University
- Maoyuan Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Junchao Ma
- International Center for Quantum Materials, School of Physics, Peking University
- Jiawei Lai
- International Center for Quantum Materials, School of Physics, Peking University
- Hong Lu
- International Center for Quantum Materials, School of Physics, Peking University
- Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University
- Dayu Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
- Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Junfeng Han
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Wende Xiao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Jian-Hao Chen
- International Center for Quantum Materials, School of Physics, Peking University
- Kai Sun
- Department of Physics, University of Michigan
- Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
- Dong Sun
- International Center for Quantum Materials, School of Physics, Peking University
- DOI
- https://doi.org/10.1038/s41467-019-13713-1
- Journal volume & issue
-
Vol. 10,
no. 1
pp. 1 – 7
Abstract
Novel optoelectronic properties have recently been observed in topological semimetals. Here, Wang et al. report a robust photocurrent generated from charge separation of photoexcited electron-hole pairs at the edge of a type-II Weyl semimetal, T d-WTe2.
