Role of nitrogen source flow on the growth of 2D GaN crystals

Gehui Zhang; Xiangping Chen; Meijie Zhu; Hua Xu; Zuoquan Tan; Ruitao Luo; Jiaqi Jia; Le Wang

Results in Physics (Dec 2022)

Role of nitrogen source flow on the growth of 2D GaN crystals

Gehui Zhang,
Xiangping Chen,
Meijie Zhu,
Hua Xu,
Zuoquan Tan,
Ruitao Luo,
Jiaqi Jia,
Le Wang

Affiliations

Gehui Zhang: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China
Xiangping Chen: Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China
Meijie Zhu: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China
Hua Xu: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China
Zuoquan Tan: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China
Ruitao Luo: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China
Jiaqi Jia: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China
Le Wang: Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials&Micro-nano Devices, Renmin University of China, Beijing 100872, China; Corresponding author.

Journal volume & issue: Vol. 43
p. 106118

Abstract

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As a class of non-layered compounds, ultrathin III-V semiconductors possess excellent physical and chemical properties, are promising candidates for optoelectronic and thermoelectric applications. Due to the strong chemical bonds both in plane and out of plane, the controllable growth of two-dimensional (2D) III-V semiconductors is quite challenging. In this study, we report the successful synthesis of 2D GaN crystals by chemical vapor deposition (CVD) on liquid Ga. The nitrogen source flow is found to be a key factor that governs the transformation of GaN growth from 2D layered mode to three-dimensional (3D) island mode. This study provides further understanding on the growth of non-layered 2D III-nitride materials.

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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