AIP Advances
(Jun 2020)
AlN grown by CBE for power device applications
Guillaume Gommé,
Adrien Cutivet,
Boussairi Bouzazi,
Abderrahim Rahim Boucherif,
Tom MacElwee,
Christophe Rodriguez,
Meriem Bouchilaoun,
Hubert Pelletier,
Philippe-Olivier Provost,
Hassan Maher,
Richard Ares
Affiliations
Guillaume Gommé
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Adrien Cutivet
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Boussairi Bouzazi
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Abderrahim Rahim Boucherif
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Tom MacElwee
GaN Systems, 1145 Innovation Drive, Ottawa, Ontario K2K 3G8, Canada
Christophe Rodriguez
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Meriem Bouchilaoun
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Hubert Pelletier
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Philippe-Olivier Provost
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Hassan Maher
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
Richard Ares
Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
DOI
https://doi.org/10.1063/1.5142615
Journal volume & issue
Vol. 10,
no. 6
Abstract
Read online
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, respectively, at a growth temperature below 600 °C. The thermal conductivity and breakdown field of 10 µm thick AlN epilayers were measured to be 57 W/(m.K) and 1.04 106 V/cm, respectively. These results demonstrate the potential of CBE as an alternative growth method for the development of thick AlN layers in high power device applications.
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