Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell
Zhiqiang Yu,
Jinhao Jia,
Xinru Qu,
Qingcheng Wang,
Wenbo Kang,
Baosheng Liu,
Qingquan Xiao,
Tinghong Gao,
Quan Xie
Affiliations
Zhiqiang Yu
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Jinhao Jia
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Xinru Qu
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Qingcheng Wang
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Wenbo Kang
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Baosheng Liu
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
Qingquan Xiao
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
Tinghong Gao
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
Quan Xie
Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching behaviors with a high resistance ratio of about two orders of magnitude, which can be maintained for over 103 s and without evident deterioration. The tunable nonvolatile multilevel resistive switching phenomena were achieved by modulating the different set voltages of the W/ZnO/ITO memory cell. In addition, the tunable nonvolatile resistive switching behaviors of the ZnO-nanofilm-based W/ZnO/ITO memory cell can be interpreted by the partial formation and rupture of conductive nanofilaments modified by the oxygen vacancies. This work demonstrates that the ZnO-nanofilm-based W/ZnO/ITO memory cell may be a potential candidate for future high-density, nonvolatile, memory applications.
