High-Performance Electro-Optical Mach–Zehnder Modulators in a Silicon Nitride–Lithium Niobate Thin-Film Hybrid Platform

Abstract

We analyzed a Mach–Zehnder electro-optical modulator based on a silicon nitride strip–loaded waveguide on 0.5 μm thick x-cut lithium niobate thin film. The optical and radio frequency parameters for two different modulator structures (Type I: packaged with 2 μm thick SiO2 and Type II: unpackaged) were simulated, calculated, and optimized. The Optical parameters included the single-mode conditions, effective indices, the separation distance between the electrode edge and the Si3N4-strip-loaded edge, optical power distribution, bending loss, optical field distribution, and half-wave voltage. The radio frequency parameters included the characteristic impedance, attenuation constant, radio frequency effective index, and −3 dB modulation bandwidth. According to the numerical simulation and theoretical analysis, the half-wave voltage product and the −3 dB modulation bandwidth were, respectively, 2.85 V·cm and 0.4 THz for Type I modulator, and 2.33 V·cm and 1.26 THz for Type II modulator, with a device length of 3 mm.

Keywords

• photonic integrated circuits
• electro-optical
• lithium niobate thin film
• Mach–Zehnder modulators
• silicon nitride strip-loaded