Influence of the Characteristics of Multilayer Interference Antireflection Coatings Based on Nb, Si, and Al Oxides on the Laser-Induced Damage Threshold of ZnGeP<sub>2</sub> Single Crystal
Nikolai Nikolayevich Yudin,
Mikhail Zinoviev,
Vladislav Gladkiy,
Evgeny Moskvichev,
Igor Kinyaevsky,
Sergey Podzyvalov,
Elena Slyunko,
Elena Zhuravleva,
Anastasia Pfaf,
Nikolai Aleksandrovich Yudin,
Maxim Kulesh
Affiliations
Nikolai Nikolayevich Yudin
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Mikhail Zinoviev
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Vladislav Gladkiy
STC IZOVAC, 220075 Minsk, Belarus
Evgeny Moskvichev
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Igor Kinyaevsky
Laboratory of Gas Lasers, P.N. Lebedev Institute of Physics RAS, 119333 Moscow, Russia
Sergey Podzyvalov
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Elena Slyunko
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Elena Zhuravleva
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Anastasia Pfaf
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Nikolai Aleksandrovich Yudin
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
Maxim Kulesh
Laboratory for Radiophysical and Optical Methods of Environmental Studies, National Research Tomsk State University, 634050 Tomsk, Russia
In this work, the effect of the defect structure and the parameters of antireflection interference coatings based on alternating layers of Nb2O5/Al2O3 and Nb2O5/SiO2 layers on the laser-induced damage threshold of ZGP crystals under the action of Ho:YAG laser radiation at a wavelength of 2.097 μm was determined. Coating deposition was carried out using the ion-beam sputtering method. The laser-induced damage threshold of the sample with a coating based on alternating layers Nb2O5 and SiO2 was W0d = 1.8 J/cm2. The laser-induced damage threshold of the coated sample based on alternating layers of Nb2O5 and Al2O3 was W0d = 2.35 J/cm2. It has been found that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser-induced damage threshold of a nonlinear crystal due to local mechanical stresses and the scattering of incident laser radiation.