Materials
(Jan 2023)
Polarization Doping in a GaN-InN System—Ab Initio Simulation
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Affiliations
Ashfaq Ahmad
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Pawel Strak
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Pawel Kempisty
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Konrad Sakowski
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Jacek Piechota
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Yoshihiro Kangawa
Research Institute for Applied Mechanics, Kyushu University, Fukuoka 816-8580, Japan
Izabella Grzegory
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Michal Leszczynski
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Zbigniew R. Zytkiewicz
Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland
Grzegorz Muziol
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Eva Monroy
University Grenoble-Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 17 av. des Martyrs, 38000 Grenoble, France
Agata Kaminska
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Stanislaw Krukowski
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
DOI
https://doi.org/10.3390/ma16031227
Journal volume & issue
Vol. 16,
no. 3
p.
1227
Abstract
Read online
Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement with the earlier obtained data despite the relatively narrow bandgap for the simulated system. The hole generation may be applied in the design of blue and green laser and light-emitting diodes.
Keywords
Published in Materials
ISSN
1996-1944 (Online)
Publisher
MDPI AG
Country of publisher
Switzerland
LCC subjects
Technology: Electrical engineering. Electronics. Nuclear engineering
Technology: Engineering (General). Civil engineering (General)
Science: Natural history (General): Microscopy
Science: Physics: Descriptive and experimental mechanics
Website
http://www.mdpi.com/journal/materials/
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