Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

• Jubin Nathawat,
• Miao Zhao,
• Chun-Pui Kwan,
• Shenchu Yin,
• Nargess Arabchigavkani,
• Michael Randle,
• Harihara Ramamoorthy,
• Guanchen He,
• Ratchanok Somphonsane,
• Naoki Matsumoto,
• Kohei Sakanashi,
• Michio Kida,
• Nobuyuki Aoki,
• Zhi Jin,
• Yunseob Kim,
• Gil-Ho Kim,
• Kenji Watanabe,
• Takashi Taniguchi,
• Jonathan P. Bird

Affiliations

Jubin Nathawat

†Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York, United States

Miao Zhao

High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, PR China

Chun-Pui Kwan

§Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York, United States

Shenchu Yin

†Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York, United States

Nargess Arabchigavkani

§Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York, United States

Michael Randle

†Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York, United States

Harihara Ramamoorthy

∥Department of Electronics Engineering, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Guanchen He

†Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York, United States

Ratchanok Somphonsane

⊥Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok, Thailand

Naoki Matsumoto

Department of Materials Science, Chiba University, Chiba, Japan

Kohei Sakanashi

Department of Materials Science, Chiba University, Chiba, Japan

Michio Kida

Department of Materials Science, Chiba University, Chiba, Japan

Nobuyuki Aoki

Department of Materials Science, Chiba University, Chiba, Japan

Zhi Jin

High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, PR China

Yunseob Kim

School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Korea

Gil-Ho Kim

School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Korea

Kenji Watanabe

Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan

Takashi Taniguchi

Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan

Jonathan P. Bird

†Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York, United States