In low-power electronics, there is a substantial demand for high-performance p-type oxide thin-film transistors (TFTs) that are capable of efficient operation at low voltages. In this study, we employ anodization to form an aluminum oxide gate dielectric layer, enabling the fabrication of p-type tin oxide (SnO) TFTs that effectively operate at a low voltage of 1 V. Under optimal device fabrication conditions, the SnO TFT demonstrates an on/off current ratio exceeding 103 and a saturation mobility of 1.94 cm2 V−1 s−1 at 1 V operation. The optimal SnO TFT fabrication conditions are subsequently used to fabricate a complementary inverter, comprising a SnO TFT and an n-type indium gallium zinc oxide TFT, achieving a gain of up to 38 at a 1 V supply voltage. Notably, the inverter’s switching point voltage is finely tuned to the ideal value, precisely half of the supply voltage. This oxide-based complementary inverter showcases promising potential in low-power electronics.
