Quantum Hall device data monitoring following encapsulating polymer deposition
Albert F. Rigosi,
Chieh-I Liu,
Bi Yi Wu,
Hsin-Yen Lee,
Mattias Kruskopf,
Yanfei Yang,
Heather M. Hill,
Jiuning Hu,
Emily G. Bittle,
Jan Obrzut,
Angela R. Hight Walker,
Randolph E. Elmquist,
David B. Newell
Affiliations
Albert F. Rigosi
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Corresponding author.
Chieh-I Liu
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
Bi Yi Wu
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
Hsin-Yen Lee
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Theiss Research, La Jolla, CA 92037, United States
Mattias Kruskopf
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States
Yanfei Yang
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States; Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States
Heather M. Hill
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Jiuning Hu
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Emily G. Bittle
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Jan Obrzut
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Angela R. Hight Walker
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
Randolph E. Elmquist
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
David B. Newell
National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
The information provided in this data article will cover the growth parameters for monolayer, epitaxial graphene, as well as how to verify the layer homogeneity by confocal laser scanning and optical microscopy. The characterization of the subsequently fabricated quantum Hall device is shown for example cases during a series of environmental exposures. Quantum Hall data acquired from a CYTOP encapsulation is also provided. Data from Raman spectroscopy, atomic force microscopy, and other electrical property trends are shown. Lastly, quantum Hall effect data are presented from devices with deposited Parylene C films measuring 10.7 μm and 720 nm. All data are relevant for Rigosi et al. [1].
