Here, we apply cathodoluminescence in scanning transmission electron microscopy to infer the influence of dislocation strain fields on the formation of point defect complexes in Si doped AlN. In addition to identifying non-radiative recombination centers, tracking Si related defect emission energies reveals a red-shift at threading dislocations. We discuss these results in the context of multiple Si-vacancy defect complexes that can form and the influence of local strain on their formation energies. By correlating the electronic and structural properties at the nanoscale, cathodoluminescence elucidates the inhomogeneity of defect complexes in Si doped AlN and offers the potential for strain engineering to control the defect energy formation landscape.
